Panjab University Researchers Develop Low-Defect Silicon Solar Cells; Study Featured in International PV Magazine
Panjab University (PU), Chandigarh researchers have reported a significant advancement in solar energy technology with the development of low-defect silicon solar cells using an advanced ion beam implantation technique. The study has also been featured in an international publication, PV Magazine.
City Air News
Apr 8, 2026 06:34
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Chandigarh, April 8, 2026: Panjab University (PU), Chandigarh researchers have reported a significant advancement in solar energy technology with the development of low-defect silicon solar cells using an advanced ion beam implantation technique. The study has also been featured in an international publication, PV Magazine.
The research focuses on enhancing the efficiency of silicon-based solar cells through precise introduction of dopants at the atomic level. The ion beam implantation approach reduces structural defects in the silicon lattice, resulting in improved charge transport and lower energy losses compared to conventional fabrication methods.
The research team successfully fabricated high-quality p-n junctions in silicon and evaluated their performance using advanced characterization tools, including X-ray spectroscopy. The findings indicate improved electrical properties, particularly low leakage current, suggesting better device performance and stability.
The work has gained international attention, with detailed coverage available in the magazine.
The research was carried out by Monika Verma at the Energy Research Centre, PU, with experimental support from national research facilities, including IUAC, New Delhi, and RRCAT, Indore.
The development is expected to contribute to ongoing efforts toward improving efficiency and scalability in solar energy systems, aligning with broader goals of sustainable energy transition.
